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| Si4562DY Vishay Siliconix N- and P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) () 0.025 at VGS = 4.5 V 0.035 at VGS = 2.5 V 0.033 at VGS = - 4.5 V 0.050 at VGS = - 2.5 V ID (A) 7.1 6.0 - 6.2 - 5.0 FEATURES * TrenchFet(R) Power MOSFET: 2.5 Rated Pb-free Available RoHS* COMPLIANT P-Channel - 20 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 D1 S2 G2 G1 S1 Ordering Information: Si4562DY-T1 Si4562DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 C TA = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 20 12 7.1 5.7 40 1.7 2.0 1.3 - 55 to 150 - 6.2 - 4.9 - 40 - 1.7 P-Channel - 20 Unit V A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol RthJA N- or P-Channel 62.5 Unit C/W Notes: a. Surface Mounted on FR4 Board, t 10 sec. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70717 S-51109-Rev. B, 04-Apr-06 Work-in-Progress www.vishay.com 1 Si4562DY Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 12 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 C VDS = - 20 V, VGS = 0 V, TJ = 55 C On-State Drain Currentb ID(on) VDS 5 V, VGS = 4.5 V VDS - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 7.1 A Drain-Source On-State Resistanceb rDS(on) VGS = - 4.5 V, ID = - 6.2 A VGS = 2.5 V, ID = 6.0 A VGS = - 2.5 V, ID = - 5.0 A Forward Transconductanceb Diode Forward Voltageb Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Sorce-Drain Reverse Recovery Tme Qg Qgs Qgd td(on) tr td(off) tf trr P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 6.2 A N-Ch N-Channel VDS = 10 V, VGS = 4.5 V, ID = 7.1 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDD = 10 V, RL = 10 ID 1 A, VGEN = 4.5 V, RG = 6 P-Channel VDD = - 10 V, RL = 10 ID - 1 A, VGEN = - 4.5 V, RG = 6 IF = 1.7 A, di/dt = 100 A/s IF = - 1.7 A, di/dt = 100 A/s P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 25 22 6.5 7 4 3.5 40 27 40 32 90 95 40 45 40 40 60 50 60 50 150 150 60 70 80 80 ns 50 35 nC gfs VSD VDS = 10 V, ID = 7.1 A VDS = - 10 V, ID = - 6.2 A IS = 1.7 A, VGS = 0 V IS = - 1.7 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 - 20 0.019 0.027 0.025 0.040 27 20 1.2 - 1.2 0.025 0.033 0.035 0.050 S V 0.6 - 0.6 1.6 - 1.6 100 100 1 -1 5 -5 A A V nA Symbol Test Conditions Min Typ Max Unit Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70717 S-51109-Rev. B, 04-Apr-06 Si4562DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 40 VGS = 5 thru 3 V 2.5 V 30 I D - Drain Current (A) I D - Drain Current (A) 30 25 C, unless noted 40 20 2V 10 20 TC = 125 C 10 25 C 1, 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.5 1.0 1.5 - 55 C 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.10 4000 Transfer Characteristics 0.08 r DS(on)- On-Resistance () C - Capacitance (pF) 3200 Ciss 2400 0.06 0.04 VGS = 2.5 V 0.02 VGS = 4.5 V 1600 Coss 800 Crss 0.00 0 10 20 ID - Drain Current (A) 30 40 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 VDS = 10 V ID = 7.1 A V GS - Gate-to-Source Voltage (V) 4 rDS(on) - On-Resistance (Normalized) 1.4 1.6 VGS = 4.5 V ID = 7.1 A Capacitance 3 1.2 2 1.0 1 0.8 0 0 5 10 15 20 25 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 70717 S-51109-Rev. B, 04-Apr-06 www.vishay.com 3 Si4562DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless noted 40 0.10 ID = 7.1 A 0.08 I S - Source Current (A) TJ = 150 C 10 TJ = 25 C r DS(on) - On-Resistance () 1.2 1.4 0.06 0.04 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1 GS 2 3 4 5 VSD - Source-to-Drain Voltage (V) - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 30 On-Resistance vs. Gate-to-Source Voltage 0.2 V GS(th) Variance (V) 24 ID = 250 A Power (W) 18 0.0 - 0.2 12 - 0.4 6 - 0.6 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.10 1.00 Time (sec) 10.00 TJ - Temperature (C) Threshold Voltage 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Single Pulse Power 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 2. Per Unit Base = RthJA = 62.5 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 70717 S-51109-Rev. B, 04-Apr-06 Si4562DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 40 VGS = 5, 4.5, 4, 3.5 V 32 I D - Drain Current (A) 3V I D - Drain Current (A) 32 25 C 24 125 C 25 C, unless noted 40 TC = - 55 C 24 2.5 V 16 2V 8 1.5 V 0 0 1 2 3 4 5 16 8 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.10 4500 Transfer Characteristics 0.08 r DS(on)- On-Resistance () C - Capacitance (pF) 3600 Ciss 0.06 VGS = 2.5 V 2700 0.04 VGS = 4.5 V 1800 0.02 900 Coss Crss 0.00 0 8 16 24 32 40 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 VDS = 10 V ID = 6.2 A rDS(on) - On-Resistance (Normalized) 1.6 VGS = 4.5 V ID = 6.2 A Capacitance V GS - Gate-to-Source Voltage (V) 4 1.4 3 1.2 2 1.0 1 0.8 0 0 5 10 15 20 25 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 70717 S-51109-Rev. B, 04-Apr-06 www.vishay.com 5 Si4562DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless noted 40 0.10 0.08 TJ = 150 C 10 r DS(on)- On-Resistance () I S - Source Current (A) 0.06 ID = 6.2 A TJ = 25 C 0.04 0.02 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.00 0 1 GS 2 3 4 5 VSD - Source-to-Drain Voltage (V) - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.6 30 On-Resistance vs. Gate-to-Source Voltage 24 V GS(th) Variance (V) 0.3 ID = 250 A Power (W) 18 12 0.0 6 - 0.3 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.10 1.00 Time (sec) 10.00 TJ - Temperature (C) Threshold Voltage 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Single Pulse Power vs. Junction-to-Ambient 0.2 Notes: 0.1 0.1 0.05 PDM t1 t1 t2 2. Per Unit Base = RthJA = 62.5 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t2 1. Duty Cycle, D = 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70717. www.vishay.com 6 Document Number: 70717 S-51109-Rev. B, 04-Apr-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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